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IRG4BC30KDPBF
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Weyland Electronics Group Pte. Ltd. | 3,000 | 4.56 | Visit Site | ||
| Win Source | 3,000 | Visit Site | |||
| Worldway Electronics | 6,976 | Visit Site | |||
| YIC International | 17,873 | Visit Site | |||
| Aztech | 628 | 17.41 | Visit Site | ||
| ZTZ Technology Limited | 22,275 | 1.952 | Visit Site | ||
| Anlinkda | 21,218 | 2.404 | Visit Site | ||
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[ Descriptions ]
| G4BC30KD International Rectifier - IRG4BC30KD PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasof |
Related Information
| G4BC20F IRG4BC20F - International Rectifier PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard T |
| G4BC20KD IRG4BC20KD - International Rectifier PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribu |
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