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Infineon
IRG4PC40WPBF
Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25
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[ Descriptions ]


G4PC40W IRF - IRG4PC40W

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution,


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PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G
G4PC40K IRG4PC40K - International Rectifier

PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A




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