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IRG4PC50UD-EPBF
IGBT 600V 55A 200W TO247-3 / Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
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[ Descriptions ]
| G4PC50UD International Rectifier - IRG4PC50UD PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes |
| G4PC50U International Rectifier - IRG4PC50U PD 91470F INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50U UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, I |
Related Information
| G4PC40FD IRG4PC40FD - International Rectifier PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G |
| G4PC40K IRG4PC40K - International Rectifier PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A |
Related Part Number
G4PF50W | G4PC40W |G4PF50W | G4PC50UD |
G4PH40UD2-E | G4PC4OUD |