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IRG4PF50WPBF
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 285 | Visit Site | |||
| Component Stockers USA | 33,902 | 2.18 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 2,400 | 27.379 | Visit Site | ||
| Win Source | 1,800 | 73.2825 | Visit Site | ||
| Worldway Electronics | 3,235 | Visit Site | |||
| YIC International | 2,500 | 7.2589 | Visit Site | ||
| IC Components Ltd. | 6,569 | 5.6191 | Visit Site | ||
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[ Descriptions ]
| G4PF50W International Rectifier - IRG4PF50W |
| G4PF50WD International Rectifier - IRG4PF50WD PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Optimized for use in Welding and Switch-Mode Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter G Low IGBT conduction losses Latest technology IGBT design offers tighter parameter distribution |
Related Information
| G4PC40FD IRG4PC40FD - International Rectifier PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G |
| G4PC40K IRG4PC40K - International Rectifier PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A |
Related Part Number
G4PC50U | G4PC40W |G4PC50UD | G4PH40UD2-E |
G4PC4OUD | G4PC50W |