Semiconductor Informations
| G4PF50W International Rectifier - IRG4PF50W |
| G4PF50WD International Rectifier - IRG4PF50WD PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Optimized for use in Welding and Switch-Mode Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter G Low IGBT conduction losses Latest technology IGBT design offers tighter parameter distribution |
| G4PC40FD IRG4PC40FD - International Rectifier PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G |
| G4PC40K IRG4PC40K - International Rectifier PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A |