Semiconductor Informations
Search G4PH40UD Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 1 | Visit Site | |||
| Weyland Electronics Group Pte. Ltd. | 2,000 | 15.211 | Visit Site | ||
| Win Source | 6,296 | Visit Site | |||
| Worldway Electronics | 5,374 | Visit Site | |||
| YIC International | 1,602 | 10.0501 | Visit Site | ||
| Microchip USA | 361 | Visit Site | |||
| IC Components Ltd. | 5,438 | 7.3 | Visit Site | ||
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[ Descriptions ]
| G4PH40UD2-E International Rectifier - IRG4PH40UD2-E PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kH- in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads |
Related Information
| G4PC40FD IRG4PC40FD - International Rectifier PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G |
| G4PC40K IRG4PC40K - International Rectifier PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A |
Related Part Number
G4PF50W | G4PC50U |G4PC40W | G4PF50W |
G4PC50UD | G4PH40UD2-E |