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IRG4PH40UD2-EP
Transistor, Igbt, N-chan+diode, 1.2KV V(br)ces, 41A I(C), TO-247AD ; Rohs Compliant: Yes
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Component Stockers USA | 20,061 | 2.41 | Visit Site | ||
| Win Source | 5,880 | Visit Site | |||
| Worldway Electronics | 6,556 | Visit Site | |||
| Microchip USA | 224 | Visit Site | |||
| Aztech | 840 | 16.24 | Visit Site | ||
| SHENGYU ELECTRONICS | 18,256 | 0.9617 | Visit Site | ||
| Anlinkda | 10,844 | 5.589 | Visit Site | ||
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File Download: G4PH40UD2-E.PDF
[ Descriptions ]
| G4PH40UD2-E International Rectifier - IRG4PH40UD2-E PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kH- in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads |
Related Information
| G4PC40FD IRG4PC40FD - International Rectifier PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G |
| G4PC40K IRG4PC40K - International Rectifier PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kH- , and Short Circuit Rated to 10 s @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247A |
Related Part Number
G4PF50W | G4PC50U |G4PC40W | G4PF50W |
G4PC50UD | G4PC4OUD |