Semiconductor Informations
| G7S313UPBF International Rectifier - IRG7S313UPBF PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7S313UPbF Key Parameters 330 1.35 160 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max |
| G7S313UPBF IRG7S313UPBF - International Rectifier PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7S313UPbF Ke |