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IRGB10B60KDPBF
IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 2,005 | Visit Site | |||
| Component Stockers USA | 2,925 | 1.5 | Visit Site | ||
| Win Source | 22,000 | Visit Site | |||
| Worldway Electronics | 8,249 | Visit Site | |||
| Anlinkda | 20,222 | 1.967 | Visit Site | ||
| SHENGYU ELECTRONICS | 12,384 | 0.9617 | Visit Site | ||
| Ansinor | 3,520 | Visit Site | |||
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[ Descriptions ]
| GB10B60KD International Rectifier - IRGB10B60KD PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. G E tsc > 10 s, TJ=150°C |
Related Information
| GB10B60KD IRGB10B60KD - International Rectifier PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Revers |
| GB14C40L IRGB14C40L - International Rectifier PD - 93891A Ignition IGBT IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-c |
Related Part Number
GBPC15005 | GB042-10P-H10-E3000 |GBPC1201 | GBJ604 |
GB6B60KD | GBPC15005-G |