Semiconductor Informations

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| GB6B60KD International Rectifier - IRGB6B60KD PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. G E tsc > 10 s, TJ=150°C B |
| GB6B60KD IRGB6B60KD - International Rectifier PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse |