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GB75DA120UP Vishay Siliconix - Insulated Gate Bipolar Transistor

GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Speed 8 kH- to 60 kH- Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant t



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GB75DA120UP Insulated Gate Bipolar Transistor - Vishay Siliconix

GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Speed 8 kH- to 60 kH- Very low



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