Semiconductor Informations
Search GT60N321 Datasheet (PDF)
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[ Descriptions ]
| GT60N321 Toshiba Semiconductor - High Power Switching Applications The 4th Generation GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 s (typ.) (IC = 60 A) FRD : trr = 0.8 s (typ.) (di, dt = 20 A, s) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Maximum Ratings (Ta = |
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Related Part Number
GTN01-12 | GTS9922E |GT9157 | GT30F122 |
GT30F124, | GT9147 |