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| GTS9922E GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005, 10, 26 REVISED DATE :2007, 01, 25B GTS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 15m 6.8A The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC, DC battery application |
Related Information
| GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM ISSUED DATE :2004, 10, 13 REVISED DATE :2006, 12, 25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resi |
| GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET - GTM Pb Free Plating Product ISSUED DATE :2006, 05, 04 REVISED DATE : GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET BVDSS RDS(ON) ID -20V 50m -3.5A Description The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and cost-effectiveness. *Low o |
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