Semiconductor Informations
| HY1607P HOOYI - N-Channel Enhancement Mode MOSFET HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description 68V, 70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY1607 YY WWJ G Package Code P : TO2 |
| HY1607 HOOYI - 68V, 70A, N-Channel Enhancement Mode MOSFET |
| HY1-xxV (HY Relays) Non-polarized 1 form C relay - NAIS ( t : ) Non-polarized 1 Form C Relay HY-RELAYS 12 .472 7.4 .291 FEATURES High sensitivity: 150 mW, 200 mW A wide range of ambient temperature: 40°C to +70°C 40°F to +158°F Sealed construction Rating: 1 A 30 V DC 10.1 .398 mm inch SPECIFICATIONS Contact Arrangement Initial contact |
| HY10-P Current Transducers HY 5 to 25-P - LEM Current Transducers HY 5 to 25-P For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 5 .. 25 A Electrical data Primary nominal r.m.s. current IPN (A) 5 10 12.5 |