Search HY1607P Datasheet (PDF)

VBsemi
HY1607P-VB
N, 60V, 120A, Rds(on), 5M¦¸@10V, 44M¦¸@4.5V, 20VGS(¡ÀV), 3.6VTH(V) , TO220 , Ups
Powered by Octopart





File Download: HY1607P.PDF


[ Descriptions ]


HY1607P HOOYI - N-Channel Enhancement Mode MOSFET

HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description 68V, 70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY1607 YY WWJ G Package Code P : TO2


Related Information


HY1-xxV (HY Relays) Non-polarized 1 form C relay - NAIS

( t : ) Non-polarized 1 Form C Relay HY-RELAYS 12 .472 7.4 .291 FEATURES High sensitivity: 150 mW, 200 mW A wide range of ambient temperature: 40°C to +70°C 40°F to +158°F Sealed construction Rating: 1 A 30 V DC 10.1 .398 mm inch SPECIFICATIONS Contact Arrangement Initial contact
HY10-P Current Transducers HY 5 to 25-P - LEM

Current Transducers HY 5 to 25-P For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 5 .. 25 A Electrical data Primary nominal r.m.s. current IPN (A) 5 10 12.5




Related Part Number

HY-SRF05 | HY57V561620C |

HY510N | HY3506 |

HY3843 | HY1906 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.