Semiconductor Informations
HY3008P N-Channel Enhancement Mode MOSFET - HOOYI |
HY3210B N-Channel Enhancement Mode MOSFET - HOOYI HY3210P, M, B, PS, PM Features 100V, 120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Sw |
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