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HY3506P-VB
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[ Descriptions ]

HY3506P HOOYI - N-Channel Enhancement Mode MOSFET

HY3506P, W N-Channel Enhancement Mode MOSFET Features 60V, 190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Co


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