Semiconductor Informations

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| IDW10G65C5 Infineon Technologies - SiC Schottky Barrier diodes SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW10G65C5 http:, , , Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket datasheet pdf - http:, , , 5th Generation thinQ!™ SiC Schottky Diode 1 Description IDW10G65C5 ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more com |
| IDW100E60 Fast Switching EmCon Diode - Infineon Technologies IDW100E60 Fast Switching EmCon Diode Features: 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 °C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http:, |
| IDW10G120C5B Silicon Carbide Schottky Diode - Infineon Silicon Carbide Schottky Diode IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2014-06-10 Industrial Power Control IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material - |