Semiconductor Informations

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| IPFH6N03LAG Infineon Technologies - Power-Transistor IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SM |
| IPFH6N03LAG Power-Transistor - Infineon Technologies IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 ° |