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IRF1010EPBF
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 660 | Visit Site | |||
| Newark | 312 | 1.67 | Visit Site | ||
| Future Electronics | 300 | Visit Site | |||
| Rochester Electronics | 1,125 | Visit Site | |||
| RS (Formerly Allied Electronics) | 13 | 0.25 | Visit Site | ||
| Arrow Electronics | 7,306 | 1.8935 | Visit Site | ||
| Mouser | 1,705 | 1.96 | Visit Site | ||
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File Download: IRF1010.PDF
[ Descriptions ]
| IRF1010E International Rectifier - Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A PD - 91670 IRF1010E HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per |
| IRF1010EL International Rectifier - Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
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