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IRF1404PBF
Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3
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[ Descriptions ]


IRF1404 International Rectifier - Power MOSFET ( Transistor )

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw
IRF1404L International Rectifier - Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely


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