Semiconductor Informations

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| IRF1404 International Rectifier - Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw |
| IRF1404L International Rectifier - Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A) PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely |
| IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
| IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |