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IRF3205ZSTRLPBF

Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK

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[ Descriptions ]

IRF320 Samsung semiconductor - N-CHANNEL POWER MOSFETS

IRF320 Intersil Corporation - 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs

Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed

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