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IRF3205PBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 1,000 | 1.1662 | Visit Site | ||
| Newark | 71,360 | 2.51 | Visit Site | ||
| Future Electronics | 178,850 | Visit Site | |||
| Rochester Electronics | 31,336 | Visit Site | |||
| Arrow Electronics | 1,081 | 1.9784 | Visit Site | ||
| Mouser | 69,987 | 2.08 | Visit Site | ||
| Microchip USA | 391 | Visit Site | |||
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[ Descriptions ]
| IRF3205 International Rectifier - HEXFET Power MOSFET(Vdss=55V, Id=110A) PD-91279E IRF3205 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0mΩ G S ID = 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per |
| IRF3205L International Rectifier - Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A) PD - 94149 IRF3205S, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0mΩ G S ID = 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance |
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