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IRF3710ZPBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; TO-220AB; Pd 160W; -55DEG
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 3,916 | 2.85 | Visit Site | ||
| Rutronik | 26,650 | Visit Site | |||
| Arrow Electronics | 6,699 | 2.2566 | Visit Site | ||
| Mouser | 7,245 | 2.85 | Visit Site | ||
| DigiKey | 3,611 | 2.85 | Visit Site | ||
| Component Stockers USA | 609 | Visit Site | |||
| Weyland Electronics Group Pte. Ltd. | 7,500 | 0.989 | Visit Site | ||
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File Download: IRF3710.PDF
[ Descriptions ]
| IRF3710 International Rectifier - Power MOSFET ( Transistor ) PD - 91309C l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated IRF3710 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili |
| IRF3710L International Rectifier - Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) PD -91310C IRF3710S, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3710S) Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.025Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per |
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