Search IRF4905 Datasheet (PDF)

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IRF4905LPBF
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 20Milliohms; ID -70A; TO-262; PD 170W; gFS 19S
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[ Descriptions ]


IRF4905 International Rectifier - Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02Ω ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
IRF4905L International Rectifier - Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1478A IRF4905S, L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem


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