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Infineon
IRF520NPBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.2 Ohm; Id 9.7A; TO-220AB; Pd 48W; Vgs +/-20V
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File Download: IRF520N.PDF
[ Descriptions ]
| IRF520N International Rectifier - Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A) PD - 91339A IRF520N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.20Ω ID = 9.7A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb |
| IRF520NS International Rectifier - Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) PD -91340A IRF520NS, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G S ID = 9.7A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re |
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