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IRF5305STRLPBF
Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.06 Ohm; Id -31A; D2PAK; Pd 110W; Vgs +/-20V
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[ Descriptions ]


IRF530 Motorola Inc - N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR


IRF530 STMicroelectronics - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW GATE CHARGE s HIGH CURRENT CAPABILITY 3 s 175 oC OPERATING TEMPERATURE t(s)DESCRIPTION This MOSFET series realized with STMicroelectronics cunique STripFET


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