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Infineon
IRF530NSTRLPBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 90MILLIOHMS; Id 17A; D2PAK; Pd 70W; Vgs +/-20V
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 800 | Visit Site | |||
| Newark | 4,042 | 3.02 | Visit Site | ||
| Future Electronics | 56,000 | Visit Site | |||
| Arrow Electronics | 4,047 | 1.7422 | Visit Site | ||
| Mouser | 17,771 | 2.76 | Visit Site | ||
| DigiKey | 9,169 | 2.77 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 80,000 | 0.23 | Visit Site | ||
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File Download: IRF530N.PDF
[ Descriptions ]
| IRF530N NXP Semiconductors - N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology |
| IRF530N Intersil Corporation - 22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com Peak Current vs Pulse Width Curve UIS Ratin |
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