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IRF530NPBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; TO-220AB; PD 70W; gFS 12S
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[ Descriptions ]


IRF530N NXP Semiconductors - N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology
IRF530N Intersil Corporation - 22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET

IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com Peak Current vs Pulse Width Curve UIS Ratin


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