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IRF540N Intersil Corporation - 33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET

IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com Peak Current vs Pulse Width Curve UIS Ratin

IRF540N International Rectifier - HEXFET Power MOSFET(Vdss=100V, Id=33A)

PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 44mΩ G S ID = 33A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

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