Semiconductor Informations

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| IRF540S NXP Semiconductors - N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ tec |
| IRF540S Vishay Siliconix - Power MOSFET ( Transistor ) IRF540S, SiHF540S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077 FEATURES D Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV, dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling |
| IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
| IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |