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IRF540STRLPBF
Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3
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[ Descriptions ]


IRF540S NXP Semiconductors - N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ tec
IRF540S Vishay Siliconix - Power MOSFET ( Transistor )

IRF540S, SiHF540S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077 FEATURES D Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV, dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling


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