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STMicroelectronics
IRF630
N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in D2PAK package
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[ Descriptions ]


IRF630 TAITRON - 200V/9A POWER MOSFET

200V, 9A POWER MOSFET (N-Channel) IRF630, IRFS630 200V, 9A Power MOSFET (N-Channel) General Description IRF630, IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 IRF630, IRFS630 are available in TO-22
IRF630 NXP Semiconductors - N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use i


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