Semiconductor Informations
IRF640 NXP Semiconductors - N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use |
IRF640 STMicroelectronics - N-CHANNEL 200V, 18A, MOSFET ( TO-220/TO-220FP ) ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220, TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV, dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip |
IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |
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