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Infineon
IRF640NPBF
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.15 Ohm; Id 18A; TO-220AB; Pd 150W; Vgs +/-20V
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 6,128 | 1.45824 | Visit Site | ||
| Newark | 56,030 | 2 | Visit Site | ||
| Future Electronics | 128,107 | Visit Site | |||
| Arrow Electronics | 244,888 | 1.8135 | Visit Site | ||
| Mouser | 28,017 | 2.06 | Visit Site | ||
| DigiKey | 24,505 | 2.27 | Visit Site | ||
| Microchip USA | 265 | Visit Site | |||
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[ Descriptions ]
| IRF640N International Rectifier - Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching |
| IRF640NL International Rectifier - Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching |
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