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IRF730 NXP Semiconductors - PowerMOS transistor Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A RDS(ON) ≤ 1 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line swit
IRF730 STMicroelectronics - N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

® IRF730 N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220 PowerMESH™ MOSFET TYPE IRF730 s s s s s V DSS 400 V R DS(on) < 1Ω ID 5.5 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. Thi



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