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IRF740 STMicroelectronics - N-CHANNEL 400V, 10A, Power MOSFET, TO-220

® IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH™ MOSFET TYPE IRF740 s s s s s V DSS 400 V R DS(on) < 0.55 Ω ID 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
IRF740 Intersil Corporation - 10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET

IRF740 Data Sheet July 1999 File Number 2311.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,

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