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IRF830ASPBF

Single N-Channel 500 V 1.4 Ohms Surface Mount Power Mosfet - D2PAK-3

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[ Descriptions ]

IRF830 NXP Semiconductors - PowerMOS transistor Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line sw

IRF830 STMicroelectronics - N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ proces

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