Semiconductor Informations

File Download: IRF840.PDF
| IRF840 Motorola Inc - 500V, 8A, N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| IRF840 NXP Semiconductors - 8A, 500V, N-Channel MOSFET, Transistor Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF840 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line s |
| IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
| IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |