Search IRF9540N Datasheet (PDF)

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IRF9540NPBF
Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3
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[ Descriptions ]


IRF9540N International Rectifier - Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
IRF9540NL International Rectifier - Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

PD - 91483C IRF9540NS, L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9540S) l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.117Ω G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr


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