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Vishay
IRFBC40PBF
Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220-3
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[ Descriptions ]


IRFBC40 STMicroelectronics - N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ proc
IRFBC40 Intersil Corporation - 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET

IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulator


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