Semiconductor Informations
IRFF9130 Intersil Corporation - -6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re |
IRFF9130 New Jersey Semiconductor - Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 |
IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |
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