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IRFF9130 Intersil Corporation - -6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET

IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re
IRFF9130 New Jersey Semiconductor - Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39


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