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IRFP150NPBF
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
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[ Descriptions ]


IRFP150N Fairchild Semiconductor - N-Channel Power MOSFET / Transistor

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve DRAIN (TAB) UIS Rating Cu
IRFP150N International Rectifier - Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are


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