Semiconductor Informations

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| IRFP254N IRF - Power MOSFET ( Transistor ) PD - 94213 IRFP254N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 125mΩ G S ID = 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low |
| IRFP254N Vishay - Power MOSFET ( Transistor ) Power MOSFET IRFP254N, SiHFP254N Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 100 17 44 Single 0.125 D TO-247 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Advanced Process Technology Dynamic dV, dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching |
| IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
| IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |