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Infineon
IRFP260NPBF
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V
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[ Descriptions ]
| IRFP260N International Rectifier - Power MOSFET ( Transistor ) PD - 94004B IRFP260N l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.04Ω G ID = 50A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on |
| IRFP260NPBF International Rectifier - HEXFET Power MOSFET PD - 95010 IRFP260NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l D VDSS = 200V RDS(on) = 0.04Ω G S ID = 50A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve |
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