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IRFR4104PBF
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 4.3Milliohms; ID 42A; D-Pak (TO-252AA); -55deg
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[ Descriptions ]


IRFR4104PbF International Rectifier - Power MOSFET ( Transistor )

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 5.5mΩ G S ID = 42A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per


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