Search IRFV260 Datasheet (PDF)

Infineon
IRFV260
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Powered by Octopart





File Download: IRFV260.PDF


[ Descriptions ]


IRFV260 International Rectifier - TRANSISTOR N-CHANNEL

Provisional Data Sheet No. PD-9.2002 HEXFET® TRANSISTOR IRFV260 N-CHANNEL 200Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver y low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such


Related Information


IRF-182xx Inductors - Vishay Intertechnology

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U
IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life




Related Part Number

IRF7326D2PBF | IRFD1Z0 |

IRFZ34NL | IRIS-G5624A |

IRF320 | IRLB4132PbF |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.