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Infineon
IRFZ24NSPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.07Ohm; ID 17A; D2Pak; PD 45W; VGS +/-20V; Qg 20
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[ Descriptions ]
| IRFZ24NS International Rectifier - Power MOSFET ( Transistor ) PD - 9.1355B IRFZ24NS, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- |
| IRFZ24NSPBF International Rectifier - HEXFET Power MOSFET PD - 95147 IRFZ24NS, LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR |
Related Information
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