Semiconductor Informations
| IRFZ34NL International Rectifier - (IRFZ34NS/L) Power MOSFET PD - 9.1311A IRFZ34NS, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
| IRFZ34NLPBF International Rectifier - Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a |
| IRF-182xx Inductors - Vishay Intertechnology w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U |
| IRF-46 Inductors Epoxy Conformal Coated - Vishay Siliconix IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life |