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IRFZ34NLPBF
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 29A; TO-262; Pd 68W; Vgs +/-20V; -55D
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[ Descriptions ]


IRFZ34NL International Rectifier - (IRFZ34NS/L) Power MOSFET

PD - 9.1311A IRFZ34NS, L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
IRFZ34NLPBF International Rectifier - Power MOSFET ( Transistor )

l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a


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