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IRFZ46NPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
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[ Descriptions ]


IRFZ46N International Rectifier - Power MOSFET ( Transistor )

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device
IRFZ46NL International Rectifier - (IRFZ46NL / IRFZ46NS) HEXFET POWER MOSFET

PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRFZ46NS IRFZ46NL VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r


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