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IRG4BC30KDPBF
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[ Descriptions ]


IRG4BC30KD-S International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

PD -91594C IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultras
IRG4BC30KD International Rectifier - 600V, 16A, INSULATED GATE BIPOLAR TRANSISTOR

PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasof


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PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with




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