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IRG4PC50FPBF
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
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[ Descriptions ]


IRG4PC50F IRF - INSULATED GATE BIPOLAR TRANSISTOR

PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Ben
IRG4PC50FD IRF - INSULATED GATE BIPOLAR TRANSISTOR

PD 91469B IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for


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