Semiconductor Informations
Search IRG4PC50FD Datasheet (PDF)
Infineon
IRG4PC50FDPBF
IRG4PC50FDPbF Series 600 V 39 A N-Channel Fast CoPack IGBT - TO-247AC
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Weyland Electronics Group Pte. Ltd. | 99 | 76.26 | Visit Site | ||
| Win Source | 99 | 129.5523 | Visit Site | ||
| Worldway Electronics | 8,660 | Visit Site | |||
| YIC International | 86,966 | 94.4706 | Visit Site | ||
| Microchip USA | 340 | Visit Site | |||
| IC Components Ltd. | 15,814 | 94.8484 | Visit Site | ||
| Aztech | 5,291 | 3.75 | Visit Site | ||
Powered by Octopart | |||||
File Download: IRG4PC50FD.PDF
[ Descriptions ]
| IRG4PC50FD IRF - INSULATED GATE BIPOLAR TRANSISTOR PD 91469B IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for |
| IRG4PC50FDPBF International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diode |
Related Information
| IRG41BC10UDPBF Insulated Gate Bipolar Transistor - International Rectifier PD - 95603 IRG4IBC10UDPbF Lead-Free www.irf.com 1 7, 28, 04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UDPbF www.irf.com 7 IRG4IBC10UDPbF 8 www.irf.com IRG4I |
| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |
Related Part Number
IRF7326D2PBF | IRFD1Z0 |IRFZ34NL | IRIS-G5624A |
IRF320 | IRLB4132PbF |